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25th International Conference on Defects in Semiconductors (ICDS-25)

The conference will address the following current problems of basic and applied research: point and extended defects in semiconductors, among them native defects; shallow and deep impurities, including magnetic impurities and impurity- related complexes. Together with defects in bulk materials, those in low-dimensional and nanoscale structures and oxide layers will be considered. The range of materials of active interest will cover not only elementary and compound semiconductors, but also those of organic and magnetic types.


- Defects in diamond, Si, Ge, SiGe, and SiC
- Defects in compound semiconductors
- Magnetic impurities
- Defects in organic semiconductors
- Microscopic studies of defects
- Positrons and muons in defect studies
- Defects at interfaces
- Defects in nanostructures and devices
- Defect engineering
- Spintronics and photovoltaics

The official conference language is English.

Даты проведения: с 20.10.2009 по 24.12.2009
Регистрация: c 08.07.2009 по 20.08.2009
Место проведения: Россия, Санкт-Петербург

Материалы конференции: http://www.ioffe.ru/ICDS-25/

Контактная информация

Email: icds25@mail.ioffe.ru
Тел: (812) 292-7152

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